鈥?/div>
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
1.09 (0.043)
1.30 (0.051)
5.97 (0.235)
6.22 (0.245)
1
2
3
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
8.89 (0.350)
9.78 (0.385)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
0.46 (0.018)
0.61 (0.024)
FEATURES
鈥?Multi鈥揵ase for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
Pin 3 鈥?Emitter
4.60 (0.181)
Typ.
1.04 (0.041)
1.14 (0.045)
I-PAK(TO251)
Pin 1 鈥?Base
Pin 2 鈥?Collector
鈥?Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
鈥?Triple Guard Rings for improved control of
high voltages.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Semelab plc.
Collector 鈥?Base Voltage(I
E
=0)
Collector 鈥?Emitter Voltage (I
B
= 0)
Emitter 鈥?Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25擄C
Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
350V
160V
10V
7A
12A
3A
20W
鈥?5 to +150擄C
Prelim. 2/97
1
2
