鈥?/div>
SEMEFAB DESIGNED AND DIFFUSED DIE
HIGH VOLTAGE
FAST SWITCHING
HIGH ENERGY RATING
1.09 (0.043)
1.30 (0.051)
5.97 (0.235)
6.22 (0.245)
1
2
3
0.76 (0.030)
1.14 (0.045)
0.64 (0.025)
0.89 (0.035)
8.89 (0.350)
9.78 (0.385)
2.31
(0.091)
Typ.
2.31
(0.091)
Typ.
0.46 (0.018)
0.61 (0.024)
FEATURES
鈥?Multi鈥揵ase for efficient energy distribution
across the chip resulting in significantly
improved switching and energy ratings
across full temperature range.
鈥?Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
鈥?Triple Guard Rings for improved control of
high voltages.
4.60 (0.181)
Typ.
1.04 (0.041)
1.14 (0.045)
I-PAK (TO251)
Pin 1 鈥?Base
Pad 2 鈥?Collector
Pad 3 鈥?Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
Semelab plc.
Collector 鈥?Base Voltage(I
E
=0)
Collector 鈥?Emitter Voltage (I
B
= 0)
Emitter 鈥?Base Voltage (I
C
= 0)
Continuous Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25擄C
Operating and Storage Temperature Range
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
500V
250V
10V
8A
12A
3A
20W
鈥?5 to +150擄C
Prelim. 2/97
1
2
