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BUL57FP Datasheet

  • BUL57FP

  • HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

  • 83.45KB

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
BUL57
BUL57FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
s
s
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTORS
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
LARGE RBSOA
TO-220FP FULLY ISOLATED PACKAGE
(U.L. COMPLIANT)
1
2
3
1
2
3
TO-220
TO-220FP
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds.
The devices are designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
BUL57
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
o
Total Dissipation at T
c
= 25 C
St orage Temperature
Max. Operating Junction Temperature
700
400
9
8
16
4
7
85
-65 to 150
150
35
Value
BUL57FP
V
V
V
A
A
A
A
W
o
C
o
C
1/7
Uni t
January 1999

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