BUL54B Datasheet

IC型號：
BUL54B
PDF描述：
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN...
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22.52KB
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SEME-LAB

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LAB

MECHANICAL DATA

Dimensions in mm

10.2

SEME

BUL54B

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

3.6 Dia.

6.3

15.1

Designed for use in

electronic ballast applications

鈥?/div>

SEMEFAB DESIGNED AND DIFFUSED DIE

HIGH VOLTAGE

FAST SWITCHING

HIGH ENERGY RATING

MILITARY AND HI鈥揜EL VERSIONS

AVAILABLE IN METAL AND CERAMIC

SURFACE MOUNT PACKAGES

1 2 3

1.3

14.0

0.85

2.54 2.54

FEATURES

鈥?Multi鈥揵ase for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

鈥?Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

鈥?Triple Guard Rings for improved control of

high voltages.

ISOLATED TO220

Pin 1 鈥?Base

Pin 2 鈥?Collector

Pin 3 鈥?Emitter

ABSOLUTE MAXIMUM RATINGS

case

= 25擄C unless otherwise stated)

CBO

CEO

EBO

C(PK)

tot

stg

Semelab plc.

Collector 鈥?Base Voltage

Collector 鈥?Emitter Voltage (I

= 0)

Emitter 鈥?Base Voltage (I

= 0)

Continuous Collector Current

Peak Collector Current

Base Current

Total Dissipation at T

case

= 25擄C

Operating and Storage Temperature Range

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

800V

400V

10V

70W

鈥?5 to +150擄C

Prelim. 3/95

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