BUL54ASMD
MECHANICAL DATA
Dimensions in mm
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
ADVANCED
DISTRIBUTED BASE DESIGN
HIGH VOLTAGE
HIGH SPEED NPN
SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 )
M a x .
1
3
2
鈥?SEMEFAB DESIGNED AND DIFFUSED DIE
鈥?HIGH VOLTAGE
鈥?FAST SWITCHING (t
f
= 40ns)
鈥?EXCEPTIONAL HIGH TEMPERATURE
PERFORMANCE
鈥?HIGH ENERGY RATING
鈥?EFFICIENT POWER SWITCHING
鈥?MILITARY AND HI鈥揜EL OPTIONS
0 .7 6
(0 .0 3 0 )
m in .
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
FEATURES
鈥?Multi鈥揵ase design for efficient energy
distribution across the chip resulting in
significantly improved switching and energy
ratings across full temperature range.
鈥?Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
鈥?Triple Guard Rings for improved control of
high voltages.
SMD1 Package
Pad 1 鈥?Base
Pad 2 鈥?Collector
Pad 3 鈥?Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
tot
T
stg
R
th
Semelab plc.
Collector 鈥?Base Voltage
Collector 鈥?Emitter Voltage (I
B
= 0)
Emitter 鈥?Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Dissipation at T
case
= 25擄C
Derate above 25擄C when used on efficient heatsink
Operating and Storage Temperature Range
Thermal Resistance Junction 鈥?Case
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
1000V
500V
10V
2A
4A
0.8A
35W
0.2W/擄C
鈥?5 to 200擄C
3.5擄C/W
Prelim. 7/00
1
2
