BUL53BSMD
MECHANICAL DATA
Dimensions in mm
ADVANCED DISTRIBUTED
BASE DESIGN
HIGH VOLTAGE, HIGH SPEED NPN
SILICON POWER TRANSISTOR
3 .6 0 (0 .1 4 2 )
M a x .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
1
3
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
鈥?CERAMIC SURFACE MOUNT PACKAGE
鈥?FULL MIL/AEROSPACE TEMPERATURE
RANGE
鈥?SCREENING OPTIONS FOR MILITARY AND
SPACE APPLICATIONS
鈥?SEMEFAB DESIGNED AND DIFFUSED DIE
鈥?HIGH VOLTAGE (V
CBO
= 800V)
鈥?FAST SWITCHING (t
f
= 100ns)
鈥?HIGH ENERGY RATING
0 .7 6
(0 .0 3 0 )
m in .
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
FEATURES
鈥?Multi-Base design for efficient energy
distribution across the chip.
鈥?SIgnificantly improved switching and energy
ratings across full temperature range.
鈥?Ion implant and high accuracy masking for
tight control of characteristics from batch to
batch.
鈥?Triple guard rings for improved control of
high voltages.
SMD1
Pad 1 鈥?Base
Pad 2 鈥?Collector
Pad 3 鈥?Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25擄C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
C
I
C(PK)
I
B
P
D
R
?
T
j
T
stg
Collector 鈥?Base Voltage
Collector 鈥?Emitter Voltage (I
B
= 0)
Emitter 鈥?Base Voltage (I
C
= 0)
Collector Current
Peak Collector Current
Base Current
Power Dissipation
Thermal Impedance
(when mounted on thermally conducting PCB)
Maximum Junction Temperature
Storage Temperature Range
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
500V
250V
10V
12A
20A
3A
60W
3.0擄C/W
200擄C
鈥?5 to +200擄C
Prelim. 7/00
Semelab plc.
1
2
