BUL52AFI Datasheet

IC型號(hào)：
BUL52AFI
PDF描述：
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN...
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LAB

MECHANICAL DATA

Dimensions in mm

10.2

SEME

BUL52AFI

ADVANCED

DISTRIBUTED BASE DESIGN

HIGH VOLTAGE

HIGH SPEED NPN

SILICON POWER TRANSISTOR

3.6 Dia.

6.3

15.1

Designed for use in

electronic ballast applications

鈥?/div>

SEMEFAB DESIGNED AND DIFFUSED DIE

HIGH VOLTAGE

FAST SWITCHING

HIGH ENERGY RATING

1 2 3

1.3

14.0

0.85

FEATURES

2.54 2.54

ISOLATED TO220

Pin 1 鈥?Base

Pin 2 鈥?Collectorn

Pin3 鈥?Emitter

鈥?Multi鈥揵ase for efficient energy distribution

across the chip resulting in significantly

improved switching and energy ratings

across full temperature range.

鈥?Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

鈥?Triple Guard Rings for improved control of

high voltages.

ABSOLUTE MAXIMUM RATINGS

case

= 25擄C unless otherwise stated)

CBO

CEO

EBO

C(PK)

tot

stg

Semelab plc.

Collector 鈥?Base Voltage

Collector 鈥?Emitter Voltage (I

= 0)

Emitter 鈥?Base Voltage (I

= 0)

Continuous Collector Current

Peak Collector Current

Base Current

Total Dissipation at T

case

= 25擄C

Operating and Storage Temperature Range

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

1000V

500V

10V

10A

2.5A

45W

鈥?5 to 150擄C

Prelim. 3/97

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