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鈥?/div>
Low Base Drive Requirement
鈥?/div>
High Peak DC Current Gain (55 Typical) @ IC = 100 mA
鈥?/div>
Extremely Low Storage Time Min/Max Guarantees Due to the
H2BIP Structure which Minimizes the Spread
鈥?/div>
Integrated Collector鈥揈mitter Free Wheeling Diode
鈥?/div>
Fully Characterized and Guaranteed Dynamic VCE(sat)
鈥?/div>
鈥? Sigma鈥?Process Providing Tight and Reproductible Parameter Spreads
Designer鈥檚 and SWITCHMODE are trademarks of Motorola, Inc.
漏
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
鈮?/div>
10%.
Designer鈥檚 Data for 鈥淲orst Case鈥?Conditions
鈥?The Designer鈥檚 Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves 鈥?representing boundaries on device characteristics 鈥?are given to facilitate 鈥渨orst case鈥?design.
Antisaturation Network
Diode and Built-in Efficient
Integrated Collector-Emitter
NPN Power Transistor with
High Speed, High Gain Bipolar
Designer's
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
The BUL44D2 is state鈥搊f鈥揳rt High Speed High gain BIPolar transistor (H2BIP).
High dynamic characteristics and lot to lot minimum spread (鹵150 ns on storage time)
make it ideally suitable for light ballast applications. Therefore, there is no need to
guarantee an hFE window.
Main features:
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
Maximum Lead Temperature for Soldering Purposes:
1/8鈥?from case for 5 seconds
Thermal Resistance
鈥?Junction to Case
鈥?Junction to Ambient
Operating and Storage Temperature
*Total Device Dissipation @ TC = 25
_
C
*Derate above 25擄C
Base Current 鈥?Continuous
Base Current
鈥?Peak (1)
Collector Current 鈥?Continuous
鈥?Peak (1)
Emitter鈥揃ase Voltage
Collector鈥揈mitter Breakdown Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Sustaining Voltage
It鈥檚 characteristics make it also suitable for PFC application.
鈩?/div>
Data Sheet
Rating
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
VCES
R
胃JC
R
胃JA
IC
ICM
IB
IBM
PD
TL
鈥?65 to 150
Value
2.5
62.5
260
700
700
400
50
0.4
POWER TRANSISTORS
2 AMPERES
700 VOLTS
50 WATTS
12
1
2
2
5
BUL44D2
CASE 221A鈥?6
TO鈥?20AB
Order this document
by BUL44D2/D
Watt
W/
_
C
_
C/W
Unit
Adc
Adc
Vdc
Vdc
Vdc
Vdc
_
C
_
C
1
BUL44D2相關(guān)型號PDF文件下載
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型號
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描述
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英文版
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
ONSEMI
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英文版
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
-
英文版
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
ONSEMI [ON...
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英文版
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
MOTOROLA [...
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POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
ONSEMI
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POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
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英文版
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
ONSEMI [ON...
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英文版
POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS
MOTOROLA [...
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英文版
POWER TRANSISTORS
ANALOGICTECH
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POWER TRANSISTORS
ANALOGICTECH&nb...
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
STMICROELECTRON...
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英文版
4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
ONSEMI
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英文版
4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR
ONSEMI [ON...
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英文版
POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS
-
英文版
POWER TRANSISTORS 2 AMPERES 700 VOLTS 40 WATTS
MOTOROLA [...
-
英文版
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
ONSEMI
-
英文版
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
-
英文版
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
MOTOROLA [...
-
英文版
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
ONSEMI [ON...
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