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BUL42D Datasheet

  • BUL42D

  • 4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR

  • 12頁

  • ONSEMI

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BUL42D
High Speed, High Gain
Bipolar NPN Transistor
Integrating an
Antisaturation Network and
a Transient Voltage
Suppression Capability
The BUL42D is a state鈥搊f鈥搕he鈥揳rt bipolar transistor. Tight dynamic
characteristics and lot to lot minimum spread make it ideally suitable
for light ballast applications.
Main Features:
http://onsemi.com
4 AMPERES
700 VOLTS
75 WATTS
POWER TRANSISTOR
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Free Wheeling Diode Built In
Flat DC Current Gain
Fast Switching Times and Tight Distribution
鈥淪ix Sigma鈥?Process Providing Tight and Reproducible Parameter
Spreads
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Sustaining Voltage
Collector鈥揃ase Breakdown Voltage
Collector鈥揈mitter Breakdown Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
鈥?Peak (Note 1)
Base Current 鈥?Continuous
鈥?Peak (Note 1)
*Total Device Dissipation @ T
C
= 25_C
*Derate above 25_C
Operating and Storage Temperature
Symbol
V
CEO
V
CBO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
P
D
T
J
, T
stg
Value
400
700
700
9
4.0
8.0
1.0
2.0
75
0.6
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
TO鈥?20
CASE 221A
STYLE 1
BUL
42D
YWW
MARKING
DIAGRAM
Y
WW
= Year
= Work Week
TYPICAL GAIN
Typical Gain @ I
C
= 1 A, V
CE
= 2 V
Typical Gain @ I
C
= 0.3 A, V
CE
= 1 V
h
FE
h
FE
13
16
鈥?/div>
鈥?/div>
ORDERING INFORMATION
Device
BUL42D
Package
TO鈥?20
Shipping
50 Units/Rail
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揅ase
Thermal Resistance 鈥?/div>
Junction鈥搕o鈥揂mbient
Maximum Lead Temperature for Soldering
Purposes: 1/8鈥?from Case for 5 seconds
Symbol
R
胃JC
R
胃JA
T
L
Value
1.66
62.5
260
Unit
擄C/W
擄C/W
擄C
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%
漏
Semiconductor Components Industries, LLC, 2002
1
April, 2002 鈥?Rev. 1
Publication Order Number:
BUL42D/D

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