廬
BUL310
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERISED AT 125
o
C
LARGE RBSOA
TO-220
1
2
3
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
maintaining a wide RBSOA.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at Tc = 25 C
Storage T emperature
Max. O perating Junction Temperature
o
Value
1000
500
9
5
10
3
4
75
-65 to 150
150
Uni t
V
V
V
V
A
A
A
W
o
o
C
C
January 1999
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