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BUL128FP Datasheet

  • BUL128FP

  • HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

  • 81.16KB

  • 7頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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BUL128FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
3
1
2
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
t ot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25 C
St orage Temperature
Max. Operating Junction Temperature
o
Value
700
400
9
4
8
2
4
31
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
o
o
C
C
April 1998
1/7

BUL128FP 產品屬性

  • BUL128FP View All Specifications

  • 50

  • 分離式半導體產品

  • 晶體管(BJT) - 單路

  • -

  • NPN

  • 4A

  • 400V

  • 500mV @ 1A，4A

  • 100µA

  • 14 @ 2A，5V

  • 31W

  • -

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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