廬
BUL1102E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
APPLICATIONS
s
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
TO-220
3
1
2
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
<5 ms)
Base Current
Base Peak Current (t
p
<5 ms)
Total Dissipation at T
c
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
1100
450
12
4
8
2
4
70
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
March 2003
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