BUK9Y30-75B
N-channel TrenchMOS鈩?logic level FET
M3D748
Rev. 01 鈥?14 July 2004
Product data
1. Product pro鏗乴e
1.1 Description
N-channel enhancement mode 鏗乪ld-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS鈩?technology.
1.2 Features
s
Very low on-state resistance
s
175
擄C
rated
s
Q101 compliant
s
Logic level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V, 24 V, and 42 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
鈮?/div>
89 mJ
s
I
D
鈮?/div>
30 A
s
R
DSon
= 25 m鈩?(typ)
s
P
tot
鈮?/div>
75 W.
2. Pinning information
Table 1:
Pin
1,2,3
4
mb
Pinning - SOT669 (LFPAK) simpli鏗乪d outline and symbol
Description
source (s)
gate (g)
mounting base,
connected to
drain (d)
mb
d
Simpli鏗乪d outline
Symbol
g
1
2
3
4
MBL286
MBL798
s1
s2
s3
Top view
SOT669 (LFPAK)
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