BUK95/96/9E06-55B
N-channel TrenchMOS鈩?logic level FET
Rev. 03 鈥?30 November 2004
Product data sheet
1. Product pro鏗乴e
1.1 General description
N-channel enhancement mode 鏗乪ld-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS鈩?technology, featuring very low
on-state resistance.
1.2 Features
s
TrenchMOS鈩?technology
s
175
擄C
rated
s
Q101 compliant
s
Logic level compatible.
1.3 Applications
s
Automotive systems
s
Motors, lamps and solenoids
s
12 V and 24 V loads
s
General purpose power switching.
1.4 Quick reference data
s
E
DS(AL)S
鈮?/div>
679 mJ
s
I
D
鈮?/div>
75 A
s
R
DSon
= 5.1 m鈩?(typ)
s
P
tot
鈮?/div>
258 W.
2. Pinning information
Table 1:
Pin
1
2
3
mb
Pinning
Description
gate (G)
drain (D)
source (S)
mounting base;
connected to drain (D)
123
3
[1]
Simpli鏗乪d outline
mb
mb
Symbol
mb
D
G
mbb076
S
2
1
1 2 3
SOT226 (I
2
-PAK)
SOT404 (D
2
-PAK)
SOT78 (TO-220AB)
[1]
It is not possible to make a connection to pin 2 of the SOT404 package.
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