suitable for surface mounting. Using
鈥檛rench鈥?/div>
technology the device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV and active
drain voltage clamping. Temperature
sensitive diodes are incorporated for
monitoring chip temperature.
The device is intended for use in
automotive and general purpose
switching applications.
BUK9120-48TC
QUICK REFERENCE DATA
SYMBOL
V
(CL)DSR
I
D
P
tot
T
j
R
DS(ON)
V
F
-S
F
PARAMETER
Drain-source clamp voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance; V
GS
= 5 V
Forward voltage,temperature
sense diodes
Negative temperature
coefficient, temperature sense
diodes
MIN.
40
TYP.
45
MAX. UNIT
55
52
116
175
20
735
1.54
V
A
W
藲C
m鈩?/div>
mV
mV/K
685
1.26
710
1.4
PINNING - SOT426
PIN
1
2
3
4
5
mb
gate
T1
(connected to mb)
T2
source
drain
DESCRIPTION
PIN CONFIGURATION
SYMBOL
d
mb
T1
g
3
T2
1 2
4 5
s
Fig. 2.
Fig. 1.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DG
鹵V
GS
I
D
I
D
I
D
I
DM
P
tot
I
GD
I
GS
V
TS
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Drain-gate clamp current
Gate-source clamp current
Source T1/T2 voltage
Storage temperature
Junction temperature
CONDITIONS
continuous
continuous
-
T
mb
= 25 藲C
T
mb
= 100 藲C
T
mb
= 140 藲C
T
mb
= 25 藲C
T
mb
= 25 藲C
5ms pulse;
鈭?/div>
= 0.01
5ms pulse;
鈭?/div>
= 0.01
-
-
-
MIN.
-
-
-
-
-
-
-
-
-
-
-
- 55
- 55
MAX.
40
38
10
52
37
25
208
116
50
50
鹵100
175
175
UNIT
V
V
V
A
A
A
A
W
mA
mA
V
藲C
藲C
February 1998
1
Rev 1.100
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