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BUK7610-55AL_08 Datasheet

  • BUK7610-55AL_08

  • Philips Semiconductors [N-channel TrenchMOS standard level ...

  • PHILIPS

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BUK7610-55AL
N-channel TrenchMOS standard level FET
Rev. 02 鈥?9 January 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
NXP General-Purpose Automotive (GPA) TrenchMOS technology specifically optimized
for linear operation. This product has been designed and qualified to the appropriate AEC
standard for use in automotive critical applications.
1.2 Features
175
擄C
rated
Stable operation in linear mode
Q101 compliant
TrenchMOS technology
1.3 Applications
12 V and 24 V loads
DC linear motor control
Automotive systems
Repetitive clamped inductive switching
1.4 Quick reference data
Table 1.
Symbol
I
D
P
tot
E
DS(AL)S
Quick reference
Parameter
drain current
total power dissipation
non-repetitive
drain-source
avalanche energy
Conditions
V
GS
= 10 V; T
mb
= 25
擄C;
see
Figure 4
and
1
T
mb
= 25
擄C;
see
Figure 2
I
D
= 75 A; V
sup
鈮?/div>
55 V;
R
GS
= 50
惟;
V
GS
= 10 V;
T
j(init)
= 25
擄C;
unclamped
inductive load
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25
擄C;
see
Figure 12
and
13
[1]
Min
-
-
-
Typ
-
-
-
Max
75
300
1.1
Unit
A
W
J
Avalanche ruggedness
Static characteristics
R
DSon
drain-source on-state
resistance
-
8.5
10
m惟
[1]
Continuous current is limited by package.

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