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BUK7575-55 Datasheet

  • BUK7575-55

  • TrenchMOS transistor Standard level FET

  • 8頁

  • PHILIPS

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Philips Semiconductors
Product specification
TrenchMOS鈩?transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
鈥檛rench鈥?technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
purpose
switching
applications.
BUK7575-55
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
55
19.7
61
175
75
UNIT
V
A
W
藲C
m鈩?/div>
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
鹵V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 k鈩?/div>
-
T
mb
= 25 藲C
T
mb
= 100 藲C
T
mb
= 25 藲C
T
mb
= 25 藲C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
16
19.7
13.9
79
61
175
UNIT
V
V
V
A
A
A
W
藲C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 k鈩?
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
TYP.
-
60
MAX.
2.46
-
UNIT
K/W
K/W
April 1998
1
Rev 1.100

BUK7575-55 產(chǎn)品屬性

  • NXP

  • MOSFET

  • N-Channel

  • 55 V

  • +/- 16 V

  • 19.7 A

  • 0.075 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220AB

  • Rail

  • 13 ns

  • - 55 C

  • 61 W

  • 16 ns

  • 50

  • 14 ns

  • BUK7575-55,127

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