BUK75/7610-55AL
N-channel TrenchMOS鈩?standard level FET
Rev. 01 鈥?31 March 2005
Product data sheet
1. Product pro鏗乴e
1.1 General description
N-channel enhancement mode 鏗乪ld-effect power transistor in a plastic package using
Philips General-Purpose Automotive (GPA) TrenchMOS鈩?technology speci鏗乧ally
optimized for linear operation.
1.2 Features
s
TrenchMOS鈩?technology
s
175
擄C
rated
s
Q101 compliant
s
Stable operation in linear mode.
1.3 Applications
s
Automotive systems
s
DC linear motor control
s
Repetitive clamped inductive
switching
s
12 V and 24 V loads.
1.4 Quick reference data
s
E
DS(AL)S
鈮?/div>
1.1 J
s
I
D
鈮?/div>
75 A
s
R
DSon
= 8.5 m鈩?(typ)
s
P
tot
鈮?/div>
300 W.
2. Pinning information
Table 1:
1
2
3
mb
Pinning
Simpli鏗乪d outline
mb
mb
Pin Description
gate (G)
drain (D)
source (S)
mounting base;
connected to drain (D)
Symbol
D
G
mbb076
S
2
1
3
SOT404 (D2PAK)
1 2 3
SOT78 (TO-220AB)
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