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BUK7510-55AL_08 Datasheet

  • BUK7510-55AL_08

  • Philips Semiconductors [N-channel TrenchMOS standard level ...

  • PHILIPS

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BUK7510-55AL
N-channel TrenchMOS standard level FET
Rev. 02 鈥?3 January 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using NXP General-Purpose Automotive (GPA) TrenchMOS technology
specifically optimized for linear operation. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features
175
擄C
rated
Stable operation in linear mode
Q101 compliant
TrenchMOS technology
1.3 Applications
12 V and 24 V loads
DC linear motor control
Automotive systems
Repetitive clamped inductive switching
1.4 Quick reference data
Table 1.
Symbol
I
D
P
tot
E
DS(AL)S
Quick reference
Parameter
drain current
Conditions
V
GS
= 10 V; T
mb
= 25
擄C;
see
Figure 1
and
4
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
75
300
1.1
A
W
J
total power dissipation T
mb
= 25
擄C;
see
Figure 2
non-repetitive
drain-source
avalanche energy
I
D
= 75 A; V
sup
鈮?/div>
55 V;
R
GS
= 50
惟;
V
GS
= 10 V;
T
j(init)
= 25
擄C;
unclamped
inductive load
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25
擄C;
see
Figure 12
and
13
Avalanche ruggedness
Static characteristics
R
DSon
drain-source on-state
resistance
-
8.5
10
m惟
[1]
Continuous current is limited by package.

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