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BUK556-60H Datasheet

  • BUK556-60H

  • PowerMOS transistor Logic level FET

  • 7頁

  • PHILIPS

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Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope.
The device is intended for use in
automotive and general purpose
switching applications.
BUK556-60H
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
V
GS
= 5 V
MAX.
60
60
150
175
22
UNIT
V
A
W
藲C
m鈩?/div>
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
鹵V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak
value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 k鈩?/div>
-
T
mb
= 25 藲C
T
mb
= 100 藲C
T
mb
= 25 藲C
T
mb
= 25 藲C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
60
60
15
60
44
240
150
175
175
UNIT
V
V
V
A
A
A
W
藲C
藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
From junction to mounting base
From junction to ambient
CONDITIONS
MIN.
-
-
TYP.
-
60
MAX.
1.0
-
UNIT
K/W
K/W
October 1993
1
Rev 1.000

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