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BUK482-100A Datasheet

  • BUK482-100A

  • PowerMOS transistor

  • 8頁

  • PHILIPS

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Philips Semiconductors
Product Specification
PowerMOS transistor
BUK482-100A
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope suitable for surface
mount applications.
The device is intended for use in
automotive and general purpose
switching applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
V
GS
= 10 V
MAX.
100
1.8
1.8
150
0.28
UNIT
V
A
W
藲C
鈩?/div>
PINNING - SOT223
PIN
1
2
3
4
gate
drain
source
drain (tab)
DESCRIPTION
PIN CONFIGURATION
4
SYMBOL
d
g
1
2
3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
鹵V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 k鈩?/div>
-
T
amb
= 25 藲C
T
amb
= 100 藲C
T
amb
= 25 藲C
T
amb
= 25 藲C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
100
100
30
1.8
1.1
7.2
1.8
150
150
UNIT
V
V
V
A
A
A
W
藲C
藲C
THERMAL RESISTANCES
SYMBOL
R
th j-b
R
th j-amb
PARAMETER
From junction to board
1
From junction to ambient
CONDITIONS
Mounted on any PCB
Mounted on PCB of Fig.17
MIN.
-
-
TYP.
40
-
MAX.
-
70
UNIT
K/W
K/W
1
Temperature measured 1-3 mm from tab.
January 1998
1
Rev 1.100

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