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BUK451-100B Datasheet

  • BUK451-100B

  • PowerMOS transistor

  • 7頁(yè)

  • PHILIPS

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Philips Semiconductors
Preliminary Specification
PowerMOS transistor
BUK451-100A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
BUK451
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
-100A
100
3.0
40
175
0.85
MAX.
-100B
100
3.0
40
175
1.1
UNIT
V
A
W
藲C
鈩?/div>
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
1 23
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
鹵V
GS
I
D
I
D
I
DM
P
tot
T
stg
T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
CONDITIONS
-
R
GS
= 20 k鈩?/div>
-
T
mb
= 25 藲C
T
mb
= 100 藲C
T
mb
= 25 藲C
T
mb
= 25 藲C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
-100A
3.0
3.0
12
40
175
175
MAX.
100
100
30
-100B
3.0
3.0
12
UNIT
V
V
V
A
A
A
W
藲C
藲C

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