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BUK102-50GS Datasheet

  • BUK102-50GS

  • PowerMOS transistor TOPFET

  • 11頁(yè)

  • PHILIPS

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Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
DESCRIPTION
Monolithic temperature and
overload protected power MOSFET
in a 3 pin plastic envelope, intended
as a general purpose switch for
automotive systems and other
applications.
BUK102-50GS
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
D
T
j
R
DS(ON)
PARAMETER
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
V
IS
= 10 V
MAX.
50
50
125
150
28
UNIT
V
A
W
藲C
m鈩?/div>
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
10 V input level
Low threshold voltage
also allows 5 V control
Control of power MOSFET
and supply of overload
protection circuits
derived from input
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
DRAIN
O/V
CLAMP
INPUT
RIG
POWER
MOSFET
LOGIC AND
PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - TO220AB
PIN
1
2
3
tab
input
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
D
TOPFET
I
P
1 23
S
January 1993
1
Rev 1.200

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