Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in a 3 pin plastic
envelope, intended as a general
purpose switch for automotive
systems and other applications.
BUK102-50DL
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
D
T
j
R
DS(ON)
I
ISL
PARAMETER
Continuous drain source voltage
Continuous drain current
Total power dissipation
Continuous junction temperature
Drain-source on-state resistance
Input supply current
V
IS
= 5 V
MAX.
50
45
125
150
35
650
UNIT
V
A
W
藲C
m鈩?/div>
碌A(chǔ)
APPLICATIONS
General controller for driving
lamps
motors
solenoids
heaters
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Overload protection against
over temperature
Overload protection against
short circuit load
Latched overload protection
reset by input
5 V logic compatible input level
Control of power MOSFET
and supply of overload
protection circuits
derived from input
Lower operating input current
permits direct drive by
micro-controller
ESD protection on input pin
Overvoltage clamping for turn
off of inductive loads
FUNCTIONAL BLOCK DIAGRAM
DRAIN
O/V
CLAMP
INPUT
RIG
POWER
MOSFET
LOGIC AND
PROTECTION
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - TO220AB
PIN
1
2
3
tab
input
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
D
TOPFET
I
P
1 23
S
April 1993
1
Rev 1.100
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