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BUJ403BX Datasheet

  • BUJ403BX

  • Silicon Diffused Power Transistor

  • 61.25KB

  • 7頁

  • PHILIPS

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403BX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
fi
PARAMETER
Collector-emitter voltage peak value
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
18
-
-
-
0.14
21
140
MAX.
1200
1200
525
-
6
10
32
1.0
25
203
UNIT
V
V
V
V
A
A
W
V
ns
T
hs
鈮?/div>
25 藲C
I
C
= 2 A; I
B
= 0.4 A
I
C
= 2 A; V
CE
= 5 V
I
C
= 2.5 A; I
B1
= 0.5 A
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Emitter-base voltage (open collector)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
16
-
-
-
-
-
-65
-
MAX.
1200
525
1200
-
6
10
3
5
32
150
150
UNIT
V
V
V
V
A
A
A
A
W
藲C
藲C
T
hs
鈮?/div>
25 藲C
November 1999
1
Rev 1.100

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