Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ205A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
-
MAX.
850
850
450
8
12
125
1.5
300
UNIT
V
V
V
A
A
W
V
碌s
T
mb
鈮?/div>
25 藲C
I
C
= 5.0 A;I
B
= 1.0 A
Ic=6A,I
B1
=1.2A
PINNING - TO220AB
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
b
1 23
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
850
450
850
8
12
4
6
125
150
150
UNIT
V
V
V
A
A
A
A
W
藲C
藲C
T
mb
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
60
MAX.
1
-
UNIT
K/W
K/W
August 1998
1
Rev 1.000
1
2
3
4
