BUF460AV
NPN TRANSISTOR POWER MODULE
s
s
s
s
s
s
s
EASY TO DRIVE TECHNOLOGY (ETD)
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
th
JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
ISOLATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
s tg
T
j
V
ISO
July 1997
Parameter
Collector-Emitter Voltage (V
BE
= -5 V)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
= 10 ms)
Base Current
Base Peak Current (t
p
= 10 ms)
T otal Dissipation at T
c
= 25 C
Storage Temperature
Max O peration Junction Temperature
Insulation W ithstand Voltage (AC-RMS)
o
Valu e
1000
450
7
80
160
18
27
270
-65 to 150
150
2500
Un it
V
V
V
A
A
A
A
W
o
o
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
C
C
V
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