BUF410
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
SGS-THOMSON PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
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MOTOR CONTROL
DESCRIPTION
The BUF410 is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. They
use a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
s tg
T
j
T
j
July 1997
Parameter
Collector-Emitter Voltage (V
BE
= -1.5 V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
T otal Dissipation at T
c
= 25 C
Storage Temperature
Max O peration Junction Temperature
Max. Operating Junction T emperature
o
Valu e
850
450
7
15
30
3
4.5
125
-65 to 150
150
150
Un it
V
V
V
A
A
A
A
W
o
o
o
C
C
C
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