Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4550AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0
TYP.
-
-
-
-
-
-
20
8
t.b.f
t.b.f
MAX.
1500
800
30
40
125
3.0
-
-
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
碌s
碌s
T
mb
鈮?/div>
25 藲C
I
C
= 20.0 A; I
B
= 5 A
f = 32kHz
f = 130kHz
I
Csat
= 20 A; f = 32kHz
I
Csat
= 8 A; f = 130kHz
PINNING - SOT430
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
heat collector
sink
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
25
40
10
15
10
125
150
150
UNIT
V
V
A
A
A
A
A
W
藲C
藲C
T
mb
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
35
MAX.
1.0
-
UNIT
K/W
K/W
1
Turn-off current.
January 1998
1
Rev 1.000
1
2
3
4
