Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525DL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with integrated damper diode intended intended for use in horizontal deflection circuits of colour television receivers
and p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a
very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
9.0
t.b.f
0.4
t.b.f
MAX.
1500
800
14
30
125
3.0
2.2
-
-
0.55
t.b.f
UNIT
V
V
A
A
W
V
V
A
A
碌s
碌s
T
hs
鈮?/div>
25 藲C
I
C
= 9.0 A; I
B
= 2.25 A
I
F
= 9.0 A
f = 16 kHz
f = 70 kHz
I
Csat
= 9.0 A;f = 16 kHz
f = 70 kHz
PINNING - SOT430
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
Rbe
heat collector
sink
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
14
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
藲C
藲C
T
hs
鈮?/div>
25 藲C
1
Turn-off current.
July 1998
1
Rev 1.000
1
2
3
4
