Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4525AL
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers an p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
8.0
7.5
t.b.f
t.b.f
MAX.
1500
800
12
30
125
3.0
-
-
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
碌s
碌s
T
mb
鈮?/div>
25 藲C
I
C
= 9.0 A; I
B
= 2.25A
f= 16 kHz
f= 70 kHz
I
Csat
= 9.0 A; f = 16 kHz
I
Csat
= 7.5 A; f = 70 kHz
PINNING - SOT430
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
heat collector
sink
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
12
30
8
12
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
藲C
藲C
T
mb
鈮?/div>
25 藲C
1
Turn-off current.
January 1998
1
Rev 1.000
1
2
3
4
