Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4523DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
with an integrated damper diode intended for use in horizontal deflection circuits of colour television receivers and
p.c monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very
low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
8
6.5
-
0.3
t.b.f
MAX.
1500
800
11
29
45
3.0
-
-
2.2
0.4
t.b.f
UNIT
V
V
A
A
W
V
A
A
V
碌s
碌s
T
hs
鈮?/div>
25 藲C
I
C
= 8 A; I
B
= 2 A
f = 16 kHz
f = 70 kHz
I
F
= 8 A
I
Csat
= 8 A; f = 16 kHz
f = 70 kHz
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
7
45
150
150
UNIT
V
V
A
A
A
A
A
W
藲C
藲C
T
hs
鈮?/div>
25 藲C
1
Turn-off current.
July 1998
1
Rev 1.000
1
2
3
4
