Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4523AW
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current.
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
8
6.5
0.3
0.14
MAX.
1500
800
11
29
125
3.0
-
-
0.4
-
UNIT
V
V
A
A
W
V
A
A
碌s
碌s
T
hs
鈮?/div>
25 藲C
I
C
= 8 A; I
B
= 2 A
f = 16 kHz
f = 70 kHz
I
Csat
= 8 A; f = 16 kHz
I
Csat
= 6.5 A; f = 70 kHz
PINNING - SOT429
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
7
125
150
150
UNIT
V
V
A
A
A
A
A
W
藲C
藲C
T
hs
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
in free air
CONDITIONS
TYP.
-
45
MAX.
1
-
UNIT
K/W
K/W
1
Turn-off current.
May 1998
1
Rev 1.000
next