Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4507DZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers and p.c monitors. Features exceptional tolerance to base drive and collector current load variations
resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4
1.7
300
MAX.
1500
800
8
15
32
3.0
-
2.1
400
UNIT
V
V
A
A
W
V
A
V
ns
T
hs
鈮?/div>
25 藲C
I
C
= 4 A; I
B
= 1.0 A
f = 16kHz
I
F
= 4 A
I
Csat
= 4 A; f = 16kHz
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
Rbe
case isolated
1 2 3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
8
15
4
6
5
32
150
150
UNIT
V
V
A
A
A
A
A
W
藲C
藲C
T
hs
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
1
Turn-off current.
January 1999
1
Rev 1.000
1
2
3
4
5
6
