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BU406/406H/408

BU406/406H/408

High Voltage Switching

鈥?Use In Horizontal Deflection Output Stage

1

TO-220

2.Collector

3.Emitter

1.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25擄C unless otherwise noted

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

C

T

J

T

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

Collector Dissipation

Junction Temperature

Storage Temperature

Parameter

Value

400

200

6

7

10

4

60

150

- 55 ~ 150

Units

V

V

V

A

A

A

W

擄C

擄C

Electrical Characteristics

T

C

=25擄C unless otherwise noted

Symbol

I

CES

Parameter

Collector Cut-off Current

Test Condition

V

CE

= 400V, V

BE

= 0

V

CE

= 250V, V

BE

= 0

V

CE

= 250V, V

BE

= 0 @ T

C

=150擄C

V

BE

= 6V, I

C

= 0

I

C

= 5A, I

B

= 0.5A

I

C

= 5A, I

B

= 0.8A

I

C

= 6A, I

B

= 1.2A

I

C

= 5A, I

B

= 0.5A

I

C

= 5A, I

B

= 0.5A

I

C

= 6A, I

B

= 1.2A

V

CE

= 10V, I

C

= 0.5A

I

C

= 5A, I

B

= 0.5A

I

C

= 5A, I

B

= 0.8A

I

C

= 6A, I

B

= 1.2A

10

0.75

0.4

0.4

Min.

Max.

5

100

1

1

1

1

1

1.2

1.2

1.5

Units

mA

碌A(chǔ)

mA

mA

V

V

V

V

V

V

MHz

碌s

碌s

碌s

I

EBO

V

CE

(sat)

Emitter Cut-off Current

Collector-Emitter Saturation Voltage

: BU406

: BU406H

: BU408

Base-Emitter Saturation Voltage

: BU406

: BU406H

: BU408

Current Gain Bandwidth Product

Turn OFF Time

: BU406

: BU406H

: BU408

V

BE

(sat)

f

T

t

OFF

漏2000 Fairchild Semiconductor International

Rev. A, February 2000

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