Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2727A
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand V
CES
pulses up to
1700V.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.0
2.2
MAX.
1700
825
12
30
125
1.0
-
tbf
UNIT
V
V
A
A
W
V
A
碌s
T
mb
鈮?/div>
25 藲C
I
C
= 5.0 A; I
B
= 0.91 A
I
CM
= 5.0 A; I
B(end)
= 0.9 A
PINNING - SOT93
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
12
30
12
25
200
25
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
藲C
藲C
average over any 20 ms period
T
mb
鈮?/div>
25 藲C
ESD LIMITING VALUES
SYMBOL
V
C
PARAMETER
CONDITIONS
MIN.
-
MAX.
10
UNIT
kV
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 k鈩?
1
Turn-off current.
September 1997
1
Rev 1.100
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