Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AF
GENERAL DESCRIPTION
High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal
deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current
load variations, resulting in a low worst-case dissipation. Designed to withstand V
CES
pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4
4.8
MAX.
1700
825
8
15
45
1.0
-
5.5
UNIT
V
V
A
A
W
V
A
碌s
T
hs
鈮?/div>
25 藲C
I
C
= 4 A; I
B
= 1.33 A
f = 16 kHz
I
Csat
= 4 A; f = 16 kHz
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
藲C
藲C
T
hs
鈮?/div>
25 藲C
ESD LIMITING VALUES
SYMBOL
V
C
PARAMETER
CONDITIONS
MIN.
-
MAX.
10
UNIT
kV
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 k鈩?
1
Turn-off current.
September 1997
1
Rev 1.200
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