Philips Semiconductors
Initial specification
Silicon Diffused Power Transistor
BU2532AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0
TYP.
-
-
-
-
-
-
7
1.4
MAX.
1500
800
16
40
125
5.0
-
1.8
UNIT
V
V
A
A
W
V
A
碌s
T
mb
鈮?/div>
25 藲C
I
C
= 7.0 A; I
B
= 1.17 A
f = 82 kHz
I
Csat
= 7.0 A; f = 82 kHz
PINNING - SOT429
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
16
40
10
15
200
10
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
藲C
藲C
average over any 20 ms period
T
mb
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
1
Turn-off current.
September 1997
1
Rev 1.000
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