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BU2522AW Datasheet

  • BU2522AW

  • Silicon Diffused Power Transistor

  • 7頁

  • PHILIPS

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
use in horizontal deflection circuits of pc monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
6.0
0.12
MAX.
1500
800
10
25
125
5.0
-
0.25
UNIT
V
V
A
A
W
V
A
碌s
T
mb
鈮?/div>
25 藲C
I
C
= 6.0 A; I
B
= 1.2 A
f = 64 kHz
I
Csat
= 6.0 A; f = 64 kHz
PINNING - SOT429
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
10
25
6
9
150
6
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
藲C
藲C
average over any 20 ms period
T
mb
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
1
Turn-off current.
September 1997
1
Rev 1.100

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