Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
1.5
0.25
MAX.
1750
850
5
8
32
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
碌s
T
hs
鈮?/div>
25 藲C
I
C
= 1.5 A; I
B
= 0.3 A
I
CM
= 1.5 A; I
B(on)
= 0.3 A
PINNING - SOT186A
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-40
-
MAX.
1750
850
5
8
3
5
100
4
32
150
150
UNIT
V
V
A
A
A
A
mA
A
W
藲C
藲C
average over any 20ms period
T
hs
鈮?/div>
25 藲C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
4.0
-
UNIT
K/W
K/W
April 1994
1
Rev 1.000
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