BTS781GP Datasheet

IC型號：
BTS781GP
PDF描述：
TrilithIC
文件大小：
243.94KB
PDF頁數(shù)：
17頁
芯片廠家：
INFINEON

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TrilithIC

Data Sheet

1.1

鈥?/div>

Overview

Features

BTS 781 GP

Quad D-MOS switch

Free configurable as bridge or quad-switch

Optimized for DC motor management applications

Low

DS ON

: 26 m鈩?high-side switch, 14 m鈩?low-side

switch (typical values @ 25

擄C)

Maximum peak current: typ. 42 A @ 25

擄C=

Very low quiescent current: typ. 4

碌A

@ 25

擄C=

Small outline, thermal optimized PowerPak

Load and GND-short-circuit-protection

Operates up to 40 V

Status flag for over temperature

Open load detection in Off-mode

Overtemperature shut down with hysteresis

Internal clamp diodes

Isolated sources for external current sensing

Under-voltage detection with hysteresis

Ordering Code

Q67006-A9526

P-TO263-15-1

Type

BTS 781 GP

1.2

Description

Package

P-TO263-15-1

The

BTS 781 GP

is part of the

TrilithIC

family containing three dies in one package:

One double high-side switch and two low-side switches. The drains of these three

vertical DMOS chips are mounted on separated leadframes. The sources are connected

to individual pins, so the

BTS 781 GP

can be used in H-bridge- as well as in any other

configuration. The double high-side is manufactured in

SMART SIPMOS

廬

technology

which combines low

DS ON

vertical DMOS power stages with CMOS control circuit. The

high-side switch is fully protected and contains the control and diagnosis circuit. To

achieve low

DS ON

and fast switching performance, the low-side switches are

manufactured in

S-FET 2

logic level technology. The equivalent standard product is the

SPD30N06S2L-13.

Data Sheet

2002-06-28

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