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BTS712N1 Datasheet

  • BTS712N1

  • Smart Four Channel Highside Power Switch (Overload protectio...

  • 187.09KB

  • 14頁(yè)

  • INFINEON   INFINEON

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PROFET廬 BTS 712 N1
Smart Four Channel Highside Power Switch
Features
鈥?/div>
Overload protection
鈥?/div>
Current limitation
鈥?/div>
Short-circuit protection
鈥?/div>
Thermal shutdown
鈥?/div>
Overvoltage protection
(including load dump)
鈥?/div>
Fast demagnetization of inductive loads
鈥?/div>
Reverse battery protection
1)
鈥?/div>
Undervoltage and overvoltage shutdown
with auto-restart and hysteresis
鈥?/div>
Open drain diagnostic output
鈥?/div>
Open load detection in OFF-state
鈥?/div>
CMOS compatible input
鈥?/div>
Loss of ground and loss of V
bb
protection
鈥?/div>
Electrostatic discharge
(ESD) protection
Product Summary
Overvoltage Protection
Operating voltage
active channels:
On-state resistance
R
ON
Nominal load current
I
L(NOM)
Current limitation
I
L(SCr)
V
bb(AZ)
43
V
V
bb(on)
5.0 ... 34
V
two parallel four parallel
one
200
100
50
m鈩?/div>
1.9
2.8
4.4
A
4
4
4
A
Application
鈥?碌C
compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
鈥?/div>
All types of resistive, inductive and capacitive loads
鈥?/div>
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
廬
technology. Fully protected by embedded protection
functions.
Pin Definitions and Functions
Pin
1,10,
11,12,
15,16,
19,20
3
5
7
9
18
17
14
13
4
8
2
6
Symbol Function
Positive power supply voltage.
Design the
V
bb
wiring for the simultaneous max. short circuit
currents from channel 1 to 4 and also for low
thermal resistance
IN1
Input 1 .. 4,
activates channel 1 .. 4 in case of
IN2
logic high signal
IN3
IN4
OUT1
Output 1 .. 4,
protected high-side power output
OUT2
of channel 1 .. 4. Design the wiring for the
OUT3
max. short circuit current
OUT4
ST1/2
Diagnostic feedback 1/2
of channel 1 and
channel 2, open drain, low on failure
ST3/4
Diagnostic feedback 3/4
of channel 3 and
channel 4, open drain, low on failure
GND1/2
Ground 1/2
of chip 1 (channel 1 and channel 2)
GND3/4
Ground 3/4
of chip 2 (channel 3 and channel 4)
Pin configuration
(top view)
V
bb
GND1/2
IN1
ST1/2
IN2
GND3/4
IN3
ST3/4
IN4
V
bb
1
2
3
4
5
6
7
8
9
10
鈥?/div>
20
19
18
17
16
15
14
13
12
11
V
bb
V
bb
OUT1
OUT2
V
bb
V
bb
OUT3
OUT4
V
bb
V
bb
1
)
With external current limit (e.g. resistor R
GND
=150
鈩?
in GND connection, resistor in series with ST
connection, reverse load current limited by connected load.
Semiconductor Group
1
06.96

BTS712N1 產(chǎn)品屬性

  • BTS712N1

  • 1,000

  • 集成電路 (IC)

  • PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • PROFET®

  • 高端

  • 非反相

  • 4

  • 165 毫歐

  • 1.9A

  • 7.5A

  • 5 V ~ 34 V

  • -40°C ~ 150°C

  • 表面貼裝

  • 20-SOIC（0.295"，7.50mm 寬）

  • PG-DSO-20

  • 帶卷 (TR)

  • BTS712N1-NDBTS712N1NTBTS712N1TBTS712N1TRBTS712N1XTSP000011300SP000317660

BTS712N1相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
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