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BTS3142D Datasheet

  • BTS3142D

  • Smart Lowside Power Switch

  • 82.05KB

  • 10頁(yè)

  • INFINEON   INFINEON

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上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

HITFET
BTS 3142 D
Smart Lowside Power Switch
Features
鈥?/div>
Logic Level Input
鈥?/div>
Input Protection (ESD)
鈥?/div>
Thermal shutdown
鈥?/div>
Overload protection
鈥?/div>
Short circuit protection
鈥?/div>
Overvoltage protection
鈥?/div>
Current limitation
鈥?/div>
Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(Nom)
E
AS
42
28
4.6
3.5
V
m鈩?/div>
A
J
Application
鈥?/div>
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
鈥?/div>
碌C compatible power switch for 12 V DC applications
鈥?/div>
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
technology. Fully protected by embedded
protection functions.
V
bb
M
HITFET
Current
Limitation
In
Pin 1
Drain
Pin 2 and 4 (TAB)
Overvoltage-
Protection
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Pin 3
Source
Page 1
2002-09-04

BTS3142D 產(chǎn)品屬性

  • BTS3142D

  • 2,500

  • 集成電路 (IC)

  • PMIC - MOSFET,電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān)

  • HITFET®

  • 低端

  • 非反相

  • 1

  • 23 毫歐

  • 4.6A

  • 45A

  • 2.2 V ~ 10 V

  • -40°C ~ 150°C

  • 表面貼裝

  • TO-252-3,DPak(2 引線+接片),SC-63

  • PG-TO252-3

  • 帶卷 (TR)

  • BTS3142DNTBTS3142DTBTS3142DXTSP000013760SP000307117SP000506218

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