HITFET
脪
II.Generation BTS 142 D
Smart Lowside Power Switch
Features
路
Logic Level Input
路
Input Protection (ESD)
路
Thermal shutdown with
auto restart
路
Overload protection
路
Short circuit protection
路
Overvoltage protection
路
Current limitation
路
Analog driving possible
P-TO252-3-11
Product Summary
Drain source voltage
On-state resistance
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(Nom)
E
AS
42
28
4.6
3.5
V
mW
A
J
Application
路
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
路
碌C compatible power switch for 12 V DC applications
路
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
脪
technology. Fully protected by embedded
protection functions.
V
bb
M
HITFET
芒
Current
Limitation
In
Pin 1
Drain
Overvoltage-
Protection
Pin 2 and 4 (TAB)
Gate-Driving
Unit
Over-
temperature
Protection
ESD
Overload
Protection
Short circuit
Protection
Pin 3
Source
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05