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HITFET

脪

II.Generation BTS 134 D

Smart Lowside Power Switch

Features

路

Logic Level Input

路

Input Protection (ESD)

路

Thermal shutdown with

auto restart

路

Overload protection

路

Short circuit protection

路

Overvoltage protection

路

Current limitation

路

Analog driving possible

P-TO252-3-11

Product Summary

Drain source voltage

On-state resistance

Nominal load current

Clamping energy

V

DS

R

DS(on)

I

D(Nom)

E

AS

42

50

3.5

3

V

mW

A

J

Application

路

All kinds of resistive, inductive and capacitive loads in switching

or linear applications

路

碌C compatible power switch for 12 V DC applications

路

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET in Smart SIPMOS

脪

technology. Fully protected by embedded

protection functions.

V

bb

M

HITFET

芒

Current

Limitation

In

Pin 1

Drain

Overvoltage-

Protection

Pin 2 and 4 (TAB)

Gate-Driving

Unit

Over-

temperature

Protection

ESD

Overload

Protection

Short circuit

Protection

Pin 3

Source

Complete product spectrum and additional information http://www.infineon.com/hitfet

Page 1

2004-03-05

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