Ordering number :EN821C
BTD4M
Silicon Planar Type
Bidirectional Diode
Features
路 Small size and light weight.
路 DHD type package.
Package Dimensions
unit:mm
1107
[BTD4M]
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Peak Current
Junction Temperature
Storage Temperature
Symbol
IP
Tj
Tstg
Conditions
f=120Hz, pulse width 10碌s
Rationgs
鹵2
鈥?0 to +125
鈥?0 to +125
Unit
A
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Breakover Voltage
Breakover Voltage Deviation
Breakover Current
Temperature Coefficient of Breakover Voltage
Peak Output Voltage
VP
5
Symbol
VBO1(VBO2)
鈭哣
BO |VBO1鈥揤BO2|
IBO1(IBO2)
0.1
Conditions
Ratings
min
29
typ
max
37
3
50
Unit
V
V
碌A
%/藲C
V
Basic Circuit
Basic Characteristic
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4289MO/9284KI, TS No.821-1/2
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