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High Voltage

Transistor (NPN)

BTC4505N3

Features

High breakdown voltage. (BVceo =400V)

Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA

C

COMCHIP

www.comchiptech.com

COLLECTOR

3

1

BASE

SOT-23

.119 (3.0)

.110 (2.8)

2

EMITTER

.020 (0.5)

Top View

.056 (1.40)

.047 (1.20

)

.006 (0.15)

.002 (0.05)

.037(0.95) .037(0.95)

.006 (0.15)max.

.020 (0.5)

.020 (0.5)

.103 (2.6)

.086 (2.2)

Dimensions in inches (millimeters)

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Junction Temperature

Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

Pd

Tj

Tstg

Limit

400

400

6

300

0.225

150

-55~+150

MDS0405003A

Page 1

.044 (1.10)

.035 (0.90)

Unit

V

V

V

mA

W

擄C

擄C

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