Philips Semiconductors
Product specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Passivated high voltage, high commutation
triac in a full pack, plastic envelope. This
triac is intended for use in motor control
circuits where high blocking voltage, high
static and dynamic dV/dt and high dI/dt can
occur. This device will commutate the full
rated rms current at the maximum rated
junction temperature, without the aid of a
snubber.
BTA208X-1000B
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
1000
8
65
UNIT
V
A
A
PINNING - SOT186A
PIN
1
2
3
DESCRIPTION
main terminal 1
PIN CONFIGURATION
case
SYMBOL
T2
main terminal 2
gate
1 2 3
T1
case isolated
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
hs
鈮?/div>
73 藲C
full sine wave;
T
j
= 25 藲C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/碌s
CONDITIONS
MIN.
-
-
MAX.
1000
8
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
65
71
21
100
2
5
5
0.5
150
125
A
A
A
2
s
A/碌s
A
V
W
W
藲C
藲C
over any 20 ms
period
-
-
-
-
-40
-
August 2003
1
Rev 1.000
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