Philips Semiconductors
Preliminary specification
Three quadrant triacs
high commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope intended for
use in circuits where high static and
dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full
rated rms current at the maximum rated
junction temperature without the aid of
a snubber.
BTA208B series C
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
MAX.
MAX.
600C
600
8
65
MAX. UNIT
800C
800
8
65
V
A
A
BTA208- 500C
Repetitive peak
500
off-state voltages
RMS on-state current
8
Non-repetitive peak
65
on-state current
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2
1
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
鈮?/div>
102 藲C
full sine wave;
T
j
= 25 藲C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/碌s
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
8
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
65
71
21
100
2
5
5
0.5
150
125
A
A
A
2
s
A/碌s
A
V
W
W
藲C
藲C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/碌s.
October 1997
1
Rev 1.000
1
2
3
4
5
