CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C307N3
Issued Date : 2002.06.11
Revised Date : 2002.12.04
Page No. : 1/4
BTA1514N3
Description
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The BTA1514N3 is designed for general purpose applications requiring high breakdown
voltage.
Features
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High collector-emitter breakdown voltage. (BV
CEO
=150V @ IC=1mA)
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Complement to NPN type BTC3906N3
Equivalent Circuit
BTA1514N3
SOT-23
B錛欱ase
C錛欳ollector
E錛欵mitter
Absolute Maximum Ratings
(Ta=25擄C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
-160
-150
-5
600
225
150
-55~+150
Unit
V
V
V
mA
mW
擄C
擄C
BTA1514N3
CYStek Product Specification
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